Features followes:
1.Advanced Process Technology
2.Ultra Low On-Resistance
3.Dynamic dv/dt Rating
4.175°C Operating Temperature
5.Fast Switching
6.Fully Avalanche Rated
DESCRIPTION followes:
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications
at power dissipation levels to approximately 50 watts. The low thermal resistance and
low package cost of the electronic component TO-220 contribute to its wide acceptance throughout the
industry.
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